Nitride semiconductor device
US9082834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses (106, 109) are formed in a nitride semiconductor multilayer body (20) composed of an undoped GaN layer (1) and an undoped AlGaN layer (2) formed on an Si substrate (10), and a source electrode (11) and a drain electrode (12) are formed in the recesses (106, 109). In a region deeper than an interface (S1, S2) between the GaN layer (1) and the source electrode (11) and drain electrode (12), which are formed from a TiAl material, a first chlorine concentration peak (P11) is formed in vicinity of the interface, and a second chlorine concentration peak (P22) having a chlorine concentration of 1.3×1017 cm−3 or lower is formed at a position deeper than the first chlorine concentration peak (P11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.