Trench MISFET

US9082847B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Tetsuro Nozu · Tokyo, JP

Key dates

• Filing date: Mar 10, 2014
• Grant date: Jul 14, 2015
• Expiry date: Mar 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/025

Abstract

This device includes a first semiconductor layer of the first conduction-type. A second semiconductor layer of the first conduction-type is provided above the first semiconductor layer. Gate electrodes respectively have one end located at the second semiconductor layer and other end located at the first semiconductor layer. The gate electrodes extend at a first direction. Gate dielectric films are provided between the first semiconductor layer and the gate electrodes. A plurality of first insulating films are provided between the second semiconductor layer and the gate electrodes and are thicker than the gate dielectric films. A first electrode is provided at a shallower position than the other end between adjacent ones of the gate electrodes and contacts the first and the second semiconductor layer and the first insulating films. A second electrode is provided at an opposite side of the first layer against to the second semiconductor layer.