Oxide semiconductor composition and manufacturing method thereof, oxide thin film transistor and manufacturing method thereof
US9082862B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
An oxide semiconductor composition comprises graphene, a metal oxide precursor, and a solvent. Based on a total weight of the oxide semiconductor composition, a concentration of the graphene is between 0.01 and 10 wt %, a concentration of the metal oxide is between 0.01 and 30 wt %, and a concentration of the solvent is between 60 and 99.98 wt %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.