Semiconductor storage device and method of manufacturing the same
US9082866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.