Schottky diode
US9082884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Oct 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A Schottky diode has: a semiconductor layer stack including a GaN layer formed over a substrate and an AlGaN layer formed on the GaN layer and having a wider bandgap than the GaN layer; an anode electrode and a cathode electrode which are formed at an interval therebetween on the semiconductor layer stack; and a block layer formed in a region between the anode electrode and the cathode electrode so as to contact the AlGaN layer. A part of the anode electrode is formed on the block layer so as not to contact the surface of the AlGaN layer. The barrier height between the anode electrode and the block layer is greater than that between the anode electrode and the AlGaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.