Inverted orthogonal spin transfer layer stack
US9082888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Oct 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.