Photovoltaic device with a zinc magnesium oxide window layer
US9082903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Apr 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.