Optoelectronic semiconductor component and scattering body
US9082944B2 · kind B2 · utility
4Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.