Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
US9082950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Oct 14, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic device includes a pinned magnetic layer and a free magnetic layer including a first body-centered cubic material and having a variable magnetization vector that has a first stable state and a second stable state. The magnetic device also includes a first non-magnetic layer and a reference layer. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer and includes a second body-centered cubic material that interfaces with the first body-centered cubic material. The magnetic device includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse through the magnetic device switches the variable magnetization vector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.