Tunneling magneto-resistive sensors with buffer layers
US9082958B2 · kind B2 · utility
9Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.