Light-emitting device and manufacturing method thereof
US9083004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
Abstract
The present invention provides a light-emitting device and a manufacturing method thereof. The light-emitting device includes: a heat dissipation layer (2), a buffer layer (4) formed on the heat dissipation layer (2), and a light emission unit (6) formed on the buffer layer (4). The heat dissipation layer (2) is made of graphene. The manufacturing method of a light-emitting device according to the present invention makes use of a graphene-made heat dissipation layer to effectively dissipate away heat emitting from the emissive layer of the light emission unit so as to effectively reduce the temperature of the light-emitting device and extend the service life of the light-emitting device. Particularly, when the light-emitting device is a light-emitting diode, the emissive layer thereof is a quantum dot emissive layer for effectively improving color saturation of the light-emitting diode and enhancing color displaying performance of the light-emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.