Reactor for atomic layer deposition (ALD), application to encapsulation of an OLED device by deposition of a transparent AI2O3 film
US9083005B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 24, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Apr 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.