Semiconductor circuit, D/A converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor
US9083423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M1/745
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed. The tunnel oxide film is formed on a region of the substrate between the diffusion layers. The charge storage film is formed on the tunnel oxide layer and stores charge. The blocking layer is formed between the charge storage film and a gate electrode and has layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller. The nodes allow external application of voltages so that the source and the drain are reversed and allow detection a gate voltage, a drain current and a substrate current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.