Patent · US Active

Etching piezoelectric material

US9085152B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 12, 2009
Grant dateJul 21, 2015
Priority date
Expiry dateApr 7, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24917
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.