Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
US9085462B2 · kind B2 · utility
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Key dates
| Filing date | Mar 25, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.