Polishing agent and polishing method
US9085714B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Dec 3, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.