Yttrium aluminum garnet phosphor, method for preparing the same, and light-emitting diode containing the same
US9085733B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Dec 7, 2012 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I):(Y3-aMa)Al5-bSibO12 (I)wherein, 0.01≦a≦0.2, 0<b≦1.2, and M is at least one selected from the group consisting of Ce, Dy, Gd, Eu, Tb, La, Pr, Nd, and Sm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.