Determining proximity effect parameters for non-rectangular semiconductor structures
US9087173B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2010 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jul 11, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related edge effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.