Spin transport sensor
US9087535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/398
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.