Nonvolatile memory device and method of programming the same
US9087590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Oct 4, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device and a method of programming the nonvolatile semiconductor memory device are disclosed. The programming method includes applying a first voltage greater than a ground voltage to a selected word line at a first time; applying a second voltage greater than the first voltage to the selected word line at a second time that occurs after a predetermined period from the first time; applying the ground voltage to a first unselected word line directly adjacent to the selected word line at the first time; and applying a third voltage greater than the ground voltage to the first unselected word line at the second time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.