Patent · US Active

Multi-bit memory device

US9087609B2 · kind B2 · utility

1Cited by

0References

19Claims

0Family size

Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

Hee Chul Lee · Daejeon, KR
Woo Young Kim · Seoul, KR

Key dates

Filing date	Aug 29, 2013
Grant date	Jul 21, 2015
Priority date	—
Expiry date	Oct 15, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/025
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed is a multi-bit memory device including: a first electrode; a third electrode which is disposed apart from the first electrode; a second electrode which is disposed between the first electrode and the third electrode; a first memory unit which is disposed between the first electrode and the second electrode and includes a material which is electrically polarized and exhibits hysteresis; and a second memory unit which is disposed between the second electrode and the third electrode and includes a material which is electrically polarized and exhibits hysteresis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.