Systems and methods for non-periodic pulse partial melt film processing

US9087696B2 · kind B2 · utility

Assignee

• The Trustees of Columbia University in the City of New York · US

Inventors

• James S. Im · New York, US
• Yikang Deng · New York, US
• Qiongying Hu · New York, US
• Ui-Jin Chung · New York, US
• Alexander B. Limanov · Nashua, US

Key dates

• Filing date: Nov 2, 2010
• Grant date: Jul 21, 2015
• Expiry date: Nov 19, 2031

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B23K2101/40
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.