Methods of manufacturing a semiconductor device
US9087789B2 · kind B2 · utility
3Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2012 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing a semiconductor device are provided. The method may include forming an etch target layer on a substrate, forming a carbon layer doped with boron on the etch target layer, a top end portion of the carbon layer having a different boron concentration from a bottom end portion of the carbon layer, patterning the carbon layer to form at least one opening exposing the etch target layer, and etching the exposed etch target layer using the carbon layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.