Structure and method for a high-K transformer with capacitive coupling
US9087838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2011 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Dec 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.