Electrostatic discharge protection devices
US9087849B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to electrostatic discharge protection devices that protect circuits from transient electrical events and more particularly to low-voltage triggered silicon-controlled rectifier devices implemented using a bulk fin field-effect transistor technology. In one aspect, an electrostatic discharge protection device comprises a low-voltage triggered silicon-controlled rectifier having an embedded grounded-gate n-channel metal oxide semiconductor structure implemented as a bulk fin field-effect transistor having a plurality of fin structures. The fin structures direct current from an avalanche zone to a gate formed over the fin structure. The electrostatic discharge protection device has a higher trigger current and a lower leakage current than a similar device having a planar embedded grounded-gate n-channel metal oxide semiconductor structure because the current flow is restricted by the fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.