Thin-film transistor having tapered organic etch-stopper layer
US9087904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | May 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt≦0.0556θ+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and θ (°) represents a taper angle of an edge portion of the protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.