Semiconductor device
US9087908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Apr 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.