Patent · US Active

Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof

US9087958B2 · kind B2 · utility

1Cited by

0References

9Claims

0Family size

Assignee

FUDAN UNIVERSITY · CN

Inventors

Pengfei Wang · Shanghai, CN
Xi Lin · Tainan, TW
Wei Wang · Albuquerque, US
Xiaoyong Liu · San Jose, US
Wei Zhang · Nanjing, CN

Key dates

Filing date	Jan 20, 2015
Grant date	Jul 21, 2015
Priority date	—
Expiry date	Jan 20, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.