Light-emitting device
US9087967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.