Patent · US Active

Transistor structures and methods of fabrication thereof

US9088000B2 · kind B2 · utility

0Cited by

2References

10Claims

0Family size

Assignee

Technion Research & Development Foundation Limited · IL

Inventors

Nir Tessler · Zichron Ya'akov, IL
Moti Margalit · Zichron Ya'akov, IL
Oded Globerman · Even Yehuda, IL
Roy Shenhar · Mevaseret Tsiyon, IL

Key dates

Filing date	Sep 16, 2013
Grant date	Jul 21, 2015
Priority date	—
Expiry date	Jan 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10K85/211
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.