Methods of modulating a quantum dot laser and a multisection quantum dot laser
US9088127B2 · kind B2 · utility
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5References
3Claims
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Key dates
| Filing date | Mar 30, 2009 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Dec 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3412
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multisection quantum dot laser (7) comprising at least first (8) and second (9) sections, each section (8, 9) comprising a semiconductor substrate (2) comprising p (3) and n type (4) layers and a quantum dot layer sandwiched therebetween; the semiconductor substrate (2) comprising a back electrical contact in electrical contact with one of the p and n type layers and a tuning electrical contact (13, 14) in electrical contact with the other of the p and n type layers; the quantum-dot layers of the first (10) and second (11) sections being portions of the same quantum dot layer (12) forming a laser cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.