Patent · US Active

Fine polycrystalline diamond compact with a grain growth inhibitor layer between diamond and substrate

US9089951B2 · kind B2 · utility

2Cited by

1References

20Claims

0Family size

Assignee

Element Six Limited · IE

Inventors

Yahua Bao · Orem, US
Scott L. Horman · Lindon, US

Key dates

Filing date	Aug 23, 2012
Grant date	Jul 28, 2015
Priority date	—
Expiry date	Jan 22, 2034

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB22F2005/001
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

Polycrystalline diamond compacts for cutting tools and rock drilling tools, and more particularly to very fine polycrystalline diamond compacts with a grain growth inhibitor layer and reduced abnormal grain growth. A method of fabricating such polycrystalline diamond material includes placing a powder layer of nano-sized grain growth inhibitor particles next to a mixture of diamond particles having an average particle size of about 1 micron or less and sintering at high pressure and high temperature to create a polycrystalline structure of sintered diamond grains. The sintered diamond grains have an average size of about 1 micron or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.