Patent · US Active

Magnetron sputtering process

US9090961B2 · kind B2 · utility

0Cited by
6References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 31, 2011
Grant dateJul 28, 2015
Priority date—
Expiry dateDec 31, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3405
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

To control reactive magnetron sputtering process using a reactive gas or reactive gases the process overall pressure is regulated by means of the flow of the reactive gas or the reactive gases, respectively. Oscillations of the flow of the reactive gas or the reactive gases, respectively are determined and used as feedback to determine the process overall pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.