Direct sensing bioFETs and methods of manufacture
US9091647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Mar 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.