Nonvolatile semiconductor memory device and method of controlling the same
US9093143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A control circuit, on selecting a memory cell as a selected memory cell to perform a write operation, before executing the write operation, applies a first voltage to the selected memory cell via a first line and a second line to perform a first read operation. The control circuit, when judged that a result of the first read operation does not match write data intended to be written, executes the write operation. The control circuit, when judged that a result of the first read operation matches write data intended to be written, omits a voltage application operation for the write operation.The first voltage is larger than a second voltage which is applied to the selected memory cell via the first line and the second line in a second read operation, the second read operation acting as a normal read operation for reading held data of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.