Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases
US9093274B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Mar 3, 2014 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor layer on a substrate, introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.