Semiconductor device and fabrication method

US9093317B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Xinpeng Wang · Singapore, SG
• Jing Jing Pan · Shanghai, CN
• Qi Wang · 安丰镇, CN
• Xianjie Ning · Shanghai, CN

Key dates

• Filing date: Mar 30, 2014
• Grant date: Jul 28, 2015
• Expiry date: Mar 30, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

Semiconductor devices and fabrication methods are provided. A semiconductor substrate includes a first region and a second region. A gate dielectric material layer is formed to cover the first region, and a control gate dielectric layer is formed over a surface portion of the second region. The control gate dielectric layer has a top surface higher than the gate dielectric layer. A gate material layer is conformally formed to cover an entire surface of the semiconductor substrate and has a top surface in the second region higher than a top surface in the first region. A first filling material layer is formed on the gate material layer. A first patterned mask layer is formed on the first filling material layer to form a gate on a gate dielectric layer in the first region. A control gate is formed on the control gate dielectric layer of the second region.