High-resolution parallel-detection sensor array using piezo-phototronics effect
US9093355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/302
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.