GaN-containing semiconductor structure
US9093365B2 · kind B2 · utility
2Cited by
1References
2Claims
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Key dates
| Filing date | Feb 26, 2014 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.