Method for forming a seed layer for the deposition of a metal on a substrate
US9093381B2 · kind B2 · utility
15Cited by
0References
20Claims
0Family size
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Key dates
| Filing date | Mar 30, 2009 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.