Semiconductor devices
US9093460B2 · kind B2 · utility
7Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.