Method of forming nonvolatile memory device
US9093479B2 · kind B2 · utility
2Cited by
14References
9Claims
0Family size
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Key dates
| Filing date | Nov 8, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Nov 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.