Compound semiconductor device

US9093512B2 · kind B2 · utility

Assignee

• FUJITSU LIMITED · JP

Inventor

• Toshihiro Ohki · Hadano, JP

Key dates

• Filing date: Dec 14, 2011
• Grant date: Jul 28, 2015
• Expiry date: Dec 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A compound semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a source electrode and a drain electrode provided over the nitride semiconductor stacked structure; a gate electrode provided between the source electrode and the drain electrode, over the nitride semiconductor stacked structure; a field plate provided at least partially between the gate electrode and the drain electrode; and a plurality of insulation films and formed over the nitride semiconductor stacked structure, wherein a number of interfaces of the plurality of insulation films is smaller between the field plate and the drain electrode than in the vicinity of the gate electrode.