Method of planarizing substrate and method of manufacturing thin film transistor using the same
US9093535B2 · kind B2 · utility
0Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Nov 14, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of planarizing a substrate includes forming a conductive pattern on a first surface of a base substrate, forming a positive photoresist layer on the base substrate and the conductive pattern, exposing the positive photoresist layer to light by irradiating a second surface of the base substrate opposite to the first surface with light, developing the positive photoresist layer to form a protruded portion on the conductive pattern, forming a planarizing layer on the base substrate and the protruded portion and eliminating the protruded portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.