Thin film transistor substrate and method of manufacturing the same
US9093536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jun 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.