Solid-state image sensor, method of manufacturing the same, and camera
US9093578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Feb 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method of manufacturing a solid-state image sensor includes preparing a structure including a photoelectric converter formed in an image sensing region and a pad electrode formed in a pad region, forming a first organic film including a first organic portion arranged in the image sensing region of the structure in the image sensing region and the pad region, forming a color filter layer on the first organic portion, forming a second organic film in the image sensing region and the pad region, forming an inorganic film in the image sensing region and the pad region, and etching the inorganic film, the second organic film, and the first organic film so as to form an opening which communicates with the pad electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.