Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
US9093581B2 · kind B2 · utility
5Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | May 29, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.