Patent · US Active

Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip

US9093604B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Peter Stauß · Nittendorf, DE
Alexander Behres · Pfatter, DE

Key dates

Filing date	Oct 21, 2011
Grant date	Jul 28, 2015
Priority date	—
Expiry date	Oct 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.