Nanowire-based optoelectronic device for light emission
US9093607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light-emitting diode is provided, including an active semiconductor area for the radiative recombination of electron-hole pairs having a plurality of nanowires, each made of an unintentionally doped semiconductor material, a first semiconductor area for radially injecting holes into each nanowire, the first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than the bandgap of the semiconductor material of the nanowires, and a second semiconductor area for axially injecting electrons into each nanowire, the second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.