Method for producing cathode active material layer
US9093708B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 13, 2009 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Mar 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The main object of the present invention is to provide a method for producing a cathode active material layer, which allows a high-purity lithium complex oxide by restraining impurities from being produced, allows a flat film, and allows orientation control. The present invention solves the above-mentioned problems by providing a method for producing a cathode active material layer, in which a cathode active material layer is formed on a substrate and contains LiXaOb (X is a transition metal element of at least one kind selected from the group consisting of Co, Ni and Mn, a=0.7-1.3, and b=1.5-2.5), characterized in that the method comprises the steps of: forming a cathode active material precursor-film on the above-mentioned substrate by a physical vapor deposition method while setting a temperature of the substrate at 300° C. or less, and performing an annealing treatment for the cathode active material precursor-film at a temperature of a crystallizable temperature of the LiXaOb or more, and characterized in that the substrate has orientation property in a surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.